Introduction To Silicon Carbide Heating Element

The operating temperature of ordinary silicon carbide heating element is 1400°C. Using high-temperature soaking sintering, surface spraying ceramics, adding special materials, and cold end immersion in molten silicon, the use temperature of the specially made silicon carbide heating element can be increased to 1600~1650 ℃, even in argon atmosphere Up to 1800°C. The resistivity of silicon carbide is 50Ω·cm (20C), 27Ω·cm (300°C), 2Ω·cm (1000°C).

The hot end part of the special silicon carbide heating element is self-bonded and sintered silicon carbide. The cold end part has the same structure, but contains a sufficient amount of silicon to increase its conductivity. There is also the addition of aluminum disilicide (MoSi2) to the silicon carbide in the heating zone, so that the long-term use temperature of the heating element can be increased to 1700°C.